dn2540 features high input impedance low input capacitance fast switching speeds low on resistance free from secondary breakdown low input and output leakage applications normally-on switches solid state relays converters linear ampli? ers constant current sources power supply circuits telecom ? ? ? ? ? ? ? ? ? ? ? ? ? general description the supertex dn2540 is a low threshold depletion mode (normally-on) transistor utilizing an advanced vertical dmos structure and supertexs well-proven silicon-gate manufacturing process. this combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coef? cient inherent in mos devices. characteristic of all mos structures, this device is free from thermal runaway and thermally-induced secondary breakdown. supertexs vertical dmos fets are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. n-channel depletion-mode vertical dmos fets ordering information device package options bv dsx /bv dgx (v) r ds(on) max () i dss min (ma) to-92 to-220 to-243aa (1) dn2540 dn2540n3-g dn2540n5-g DN2540N8-G 400 25 150 -g indicates package is rohs compliant (green) (1) same as sot-89. absolute maximum ratings parameter value drain-to-source voltage bv dsx drain-to-gate voltage bv dgx gate-to-source voltage 20v operating and storage temperature -55 o c to +150 o c soldering temperature* 300 o c absolute maximum ratings are those values beyond which damage to the device may occur. functional operation under these conditions is not implied. continuous operation of the device at the absolute rating level may affect device reliability. all voltages are referenced to device ground. *distance of 1.6mm from case for 10 seconds. pin con? gurations 3-lead to-243aa (n8) 3-lead to-220 (n5) 3-lead to-92 (n3) gate source drain drain gate source drain gate source drain drain
2 dn2540 thermal characteristics package i d (continuous) (1) (ma) i d (pulsed) (ma) power dissipation @t c = 25 o c (w) jc ( o c/w) ja ( o c/w) i dr (1) (ma) i drm (ma) to-92 120 500 1.0 125 170 120 500 to-220 500 500 15 8.3 70 500 500 to-243aa 170 500 1.6 (2) 15 78 (2) 170 500 notes: (1) i d (continuous) is limited by max rated t j . (2) mounted on fr5 board, 25mm x 25mm x 1.57mm. product marking 3-lead to-243aa (n8) 3-lead to-220 (n5) 3-lead to-92 (n3) electrical characteristics (t a @ 25 o c unless otherwise speci? ed) sym parameter min typ max units conditions bv dsx drain-to-source breakdown voltage 400 - - v v gs = -5.0v, i d = 100a v gs(off) gate-to-source off voltage -1.5 - -3.5 v v ds = 25v, i d = 10a v gs(off) change in v gs(off) with temperature - - 4.5 mv/ o cv ds = 25v, i d = 10a i gss gate body leakage current - - 100 na v gs = 20v, v ds = 0v i d(off) drain-to-source leakage current - - 10 a v ds = max rating, v gs = -10v - - 1.0 ma v ds = 0.8 max rating, v gs = -10v, t a = 125 o c i dss saturated drain-to-source current 150 - - ma v gs = 0v, v ds = 25v r ds(on) static drain-to-source on-state resistance -1725 v gs = 0v, i d = 120ma r ds(on) change in r ds(on) with temperature - - 1.1 %/ o cv gs = 0v, i d = 120ma g fs forward transconductance - 325 - mmho v ds = 10v, i d = 100ma c iss input capacitance - 200 300 pf v gs = -10v, v ds = 25v, f = 1mhz c oss common source output capacitance - 12 30 c rss reverse transfer capacitance - 1 5 l = lot number yy = year sealed ww = week sealed = green packaging dn2540n5 lllllllll yyww yy = year sealed ww = week sealed = green packaging dn 2540 yyww w = code for week sealed dn5dw
3 dn2540 sym parameter min typ max units conditions t d(on) turn-on delay time - - 10 ns v dd = 25v, i d = 150ma, r gen = 25?, t r rise time - - 15 t d(off) turn-off delay time - - 15 t f fall time - - 20 v sd diode forward voltage drop - - 1.8 v v gs = -10v, i sd = 120ma t rr reverse recovery time - 800 - ns v gs = -10v, i sd = 1.0a notes: 1.all d.c. parameters 100% tested at 25 o c unless otherwise stated. (pulse test: 300s pulse, 2% duty cycle.) 2.all a.c. parameters sample tested. 90% 10% 90% 90% 10% 10% pulse generator v dd r l output d.u.t. t (on) t d(on) t (off) t d(off) t f t r input input output 0v v dd r gen 0v -10v switching waveforms and test circuit
4 dn2540 typical performance curves output characteristics 0.5 0.4 0.3 0.2 0.1 0 080 160 240 320 400 v ds (volts) transconductance vs. drain current power dissipation vs. ambient temperature 0150 100 50 10 20 0 125 75 25 to-220 to-92 to-243aa v gs = 1.0v 0.5v -0.5v -1.0v 0v saturation characteristics 250 200 150 100 50 0 0123 5 4 v gs = 1.0v 0.5v 0v -0.5v -1.0v maximum rated safe operating area 1 1000 100 10 1 0.1 0.01 0.001 to-92/to-220 (pulsed) to-243aa (dc) t c = 25 c (t a = 25 c) to-220 (dc) to-92 (dc) thermal response characteristics ) d e z i l a m r o n ( e c n a t s i s e r l a m r e h t 1.0 0.8 0.6 0.4 0.2 0.001 10 0.01 0.1 1 0 to-243aa t a = 25 c p d = 1.6w 0.5 0.4 0.3 0.2 0.1 0 0 250 50 100 150 200 v ds = 10v t a = -55 c t a = 25 c t a = 125 c to-220 t c = 25 c p d = 15w to-92 t c = 25 c p d = 1.0w t ( a 5 2 = ) c i d ) s e r e p m a ( i d ) s p m a i l l i m ( v ds (volts) g s f ) s n e m e i s ( i d (milliamps) t c ( c) p d ) s t t a w ( v ds (volts) i d ) s e r e p m a ( t p (seconds)
5 dn2540 typical performance curves (cont.) bv dss variation with temperature v b s s d d e z i l a m r o n 1.1 1.05 1.0 0.95 0.9 -50 0 80 160 240 320 400 0 50 100 150 transfer characteristics v gs (volts) v ds (volts) i d ) s e r e p m a ( 0.40 0.32 0.24 0.16 0.08 0 -3 2 -1 0 12 capacitance vs. drain-to-source voltage ) s d a r a f o c i p ( c 200 150 100 50 0 010 20 30 40 v gs = -5v v gs = 0v v ds = 10v v gs = -10v c oss c rss c iss t a = -55 c t a = 25 c r ds (on) @ i d = 120ma v gs(off) @ 10 a v ds = 20v v ds = 40v 200pf 170pf t a = 125 c on-resistance vs. drain current 100 80 60 40 20 0 q c (nanocoulombs) r ) n o ( s d ) s m h o ( -50 0 50 100 150 0 0.4 0.8 1.2 1.6 2.0 v gs(off) and r ds variation with temperature 2.5 2 1.5 1 0.5 0 15 10 5 0 -5 t j ( c) d e z i l a m r o n gate drive dynamic characteristics v s g ) s t l o v ( t j ( c) i d (milliamps)
6 dn2540 seating plane 1 2 3 front view side view bottom view e1 e d e1 l e c 1 2 3 b a 3-lead to-92 package outline (n3) symbol a b c d e e1 e e1 l dimension (inches) min .170 .014 .014 .175 .125 .080 .095 .045 .500 nom--------- max .210 .022 .022 .205 .165 .105 .105 .055 - drawings not to scale.
7 dn2540 3-lead to-220 (power package) package outline (n5) symbol a a1 a2 b b2 c d d1 d2 e e1 e2 e h1 l l1 q p dimension (inches) min .140 .020 .080 .015 .045 .014 .560 .330 .480 .380 .270 - .100 bsc .230 .500 - .100 .139 nom - - - .027 .057 - - - ---- ----- max .190 .055 .115 .040 .070 .024 .650 .355 .507 .420 .350 .030 .270 .580 .250 .135 .161 jedec registration to-220, variation ab, issue k, april 2002. drawings not to scale. l a2 a e detail b 12 3 d d1 q 4 e2 e p seating plane a1 a a chamfer optional h1 e d2 thermal pad front view side view view a - a l1 b b2 1 2 3 e1 detail b c
8 dn2540 (the package drawing(s) in this data sheet may not re? ect the most current speci? cations. for the latest package outline information go to http://www.supertex.com/packaging.html .) 3-lead to-243aa (sot-89) package outline (n8) symbol a b b1 c d d1 e e1 e e1 h l dimensions (mm) min 1.40 0.44 0.36 0.35 4.40 1.62 2.29 2.13 1.50 bsc 3.00 bsc 3.94 0.89 nom-------- -- max 1.60 0.56 0.48 0.44 4.60 1.83 2.60 2.29 4.25 1.20 jedec registration to-243, variation aa, issue c, july 1986. drawings not to scale . 4 2 1 d e h e1 e b1 3 d1 e1 a c l top view side view b doc.# dsfp-dn2540 a100907
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